Strain dependence of electron-phonon energy loss rate in many-valley semiconductors
نویسندگان
چکیده
منابع مشابه
Temperature dependence of band gaps in semiconductors: Electron-phonon interaction
We have theoretically investigated, by ab initio techniques, the phonon properties of several semiconductors with chalcopyrite structure. Comparison with experiments has led us to distinguish between materials with d electrons in the valence band (e.g., CuGaS2, AgGaS2) and those without d electrons (e.g., ZnSnAs2). The former exhibit a rather peculiar nonmonotonic temperature dependence of the ...
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Most of the experimental results for the temperature dependence of gaps have been obtained for elemental or binary semiconductors.[1] Lately, however, ternary materials such as those with chalcopyrite structure have begun to be investigated. Among the chalcopyrites under examination are II-IV-V2 compounds (e.g. ZnGeAs2) and those in which the divalent cation is replaced by either monovalent cop...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3579524